Description
Description
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP
| Product Attribute | |
| Manufacturer | STMicroelectronics |
| Transistor Type | 8 NPN Darlington |
| Current - Collector (Ic) (Max) | 500mA |
|
Voltage - Collector Emitter Breakdown (Max)
|
50V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
|
Power - Max
|
2.25W |
|
Operating Temperature
|
-20°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Datasheet | Datasheet |