Description
Description
N-Channel 100 V 195A (Tc) 520W (Tc) Through Hole TO-247AC
Product Attribute | |
Manufacturer | Infineon Technologies |
FET Type
|
N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss)
|
100 V
|
Current - Continuous Drain (Id) @ 25°C
|
195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On)
|
10V |
Rds On (Max) @ Id, Vgs
|
2.6mOhm @ 180A, 10V
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs
|
540 nC @ 10 V
|
Vgs (Max)
|
±20V
|
Input Capacitance (Ciss) (Max) @ Vds
|
19860 pF @ 50 V
|
Power Dissipation (Max)
|
520W (Tc)
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
Mounting Type | Through Hole |
Datasheet | Datasheet |