Description
Description
P-Channel 200 V 400mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
| Product Attribute | |
| Manufacturer |
Vishay Siliconix |
|
FET Type
|
P-Channel |
| Technology | MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss)
|
200 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
400mA (Ta) |
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
3Ohm @ 240mA, 10V
|
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
8.9 nC @ 10 V
|
|
Vgs (Max)
|
±20V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
170 pF @ 25 V
|
|
Power Dissipation (Max)
|
1W (Ta)
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
| Mounting Type | Through Hole |
| Datasheet | Datasheet |